A poly-silicon TFT with a sub-5-nm thick channel for low-power gain cell memory in mobile applicationsISHII, Tomoyuki; OSABE, Taro; MINE, Toshiyuki et al.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 11, pp 1805-1810, issn 0018-9383, 6 p.Article

Random telegraph signal in flash memory: Its impact on scaling of multilevel flash memory beyond the 90-nm nodeKURATA, Hideaki; OTSUGA, Kazuo; KOTABE, Akira et al.IEEE journal of solid-state circuits. 2007, Vol 42, Num 6, pp 1362-1369, issn 0018-9200, 8 p.Article

SESO memory : A 3T gain cell solution using ultra thin silicon film for dense and low power embedded memoriesISHII, Tomoyuki; OSABE, Taro; MINE, Toshiyuki et al.Custom integrated circuits conference. 2004, pp 457-463, isbn 0-7803-8495-4, 1Vol, 7 p.Conference Paper